32 mega bit 3.3 volt cmos flash eeprom dp3z2mx16pmty5/dp3z2mx16pmby5 ad vanced in for ma tion de scrip tion: the dp3z2mx16pmty5/dp3z2mx16pmby5 is a 32 megabit 3.3 volt only cmos flash eeprom (electrically in-system programmable and erasable rom memory) module. these modules are constructed of two 1m x 16 flash eeprom?s that are configured as a 2m x 16. the module features high speed access times with common data inputs and outputs. the flash devices used in this module also features bgo (blank ground operations). this feature allows program or erase operations to be performed on one bank of the device while a read operation is performed on the other bank. fea tures: ? organizations available: 2m x 16 ? fast read access times: 80ns ( v dd =3.30.3v) 90ns ( v dd =2.7~3.6v) ? industrial temperature: -40c to +85c ? low power: 70 ma maximum active (16 bit mode) 10a maximum standby (cmos) ? 100k program / erase cycles ? 3.3 volt only in-system programming ? package: 56-pin tsop stack 1 30a243-00 rev. b pin-out di a gram func tional block di a gram 4 meg based, 10 - 17ns, lp-stack 30a190-16 a this document contains information on a product under consideration for development at dense-pac microsystems, inc. dense-pac reserves the right to change or discontinue information on this product without prior notice. pin names a0 - a19 address dq0 - dq15 data input / output ce 0, ce 1 low chip enables we write enable oe output enable wp write protect rp reset/power down byte byte enable ry / by ready/busy v dd power (+3.3v) vss ground n.c. no connect
dp3z2mx16ptmy5/dp3z2mx16pmby5 dense-pac microsystems, inc. ad vanced in for ma tion 2 30a243-00 rev. b or dering in for ma tion me chan i cal drawing dense-pac microsystems, inc. 7321 lincoln way, garden grove, california 92841-1431 (714) 898-0007 u (800) 642-4477 u fax: (714) 897-1772 u http :// www .dense-pac.com
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